A potential red-emitting phosphor with high color-purity for near-UV light emitting diodes

New red tungstates phosphors, Na5La1−xLnx(WO4)4 (Ln=Eu, Sm) and Na5Eu1−xSmx(WO4)4, were prepared by solid-state reaction technique. And their structure and photo-luminescent properties were investigated. The introduction of Sm3+ broadened the excitation band around 400nm of the phosphors, and streng...

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Bibliographic Details
Published in:Current applied physics 2012, 12(4), , pp.1084-1087
Main Authors: Wang, Zhengliang, Zhang, Yaling, Xiong, Li, Li, Xiaofan, Guo, Junming, Gong, Menglian
Format: Article
Language:English
Subjects:
absorption
Chip formation
Energy transfer
Eyes
Indium gallium nitrides
Light-emitting diodes
Phosphors
Photoluminescence
red light
Tungstates
Tungstates phosphor
White-light emitting diode
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Summary:New red tungstates phosphors, Na5La1−xLnx(WO4)4 (Ln=Eu, Sm) and Na5Eu1−xSmx(WO4)4, were prepared by solid-state reaction technique. And their structure and photo-luminescent properties were investigated. The introduction of Sm3+ broadened the excitation band around 400nm of the phosphors, and strengthened the red emission. And the possible energy transfer process from Sm3+ to Eu3+ is discussed. The single red LED was fabricated by combining InGaN chip with Na5Eu0.94Sm0.06(WO4)4 as red phosphor, intense red light can be observed by naked eyes. Then the phosphor Na5Eu0.94Sm0.06(WO4)4 may be a good candidate for red component of near-UV InGaN-based W-LEDs, because of efficient red-emitting with broadened absorption around 400nm and appropriate CIE chromaticity coordinates (x=0.65, y=0.34). ► The excitation bands around 400nm of Na5Eu1−xSmx(WO4)4 are broadened by Sm3+–Eu3+ co-doping. ► The phosphor Na5Eu0.94Sm0.06(WO4)4 exhibits efficient red-emitting under near-UV excitation, compared with. Na5Eu(WO4)4. ► The possible energy transfer process from Sm3+ to Eu3+ in these compounds was discussed. ► Bright red light can be observed from the red LED-based Na5Eu0.94Sm0.06(WO4)4.
ISSN:1567-1739
1878-1675
DOI:10.1016/j.cap.2012.01.011