Improving the gas barrier properties of a-SiOxCyNz film at low temperature using high energy and suitable nitrogen flow rate

Amorphous silicon oxycarbonitride thin films were synthesized on polyethylene terephthalate (PET) substrates at low temperatures (∼80 °C) by plasma-enhanced chemical vapor deposition (PECVD). A high ion flux and suitable nitrogen flow rate improved the gas barrier properties and deposition rate of t...

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Bibliographic Details
Published in:Current applied physics 2013, 13(5), , pp.885-889
Main Authors: Jin, Su B., Lee, Joon S., Choi, Yoon S., Choi, In S., Han, Jeon G., Hori, M.
Format: Article
Language:English
Subjects:
Atomic structure
Barriers
chemical structure
Chemical vapor deposition
Coatings
Deposition
energy
Flow rate
Fourier transform infrared spectroscopy
Gas barrier
Ion flux
Low temperature
nitrogen
Nitrogen flow rate
Polyethylene terephthalates
silicon
SiOxCyNz
temperature
water vapor
X-ray photoelectron spectroscopy
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Summary:Amorphous silicon oxycarbonitride thin films were synthesized on polyethylene terephthalate (PET) substrates at low temperatures (∼80 °C) by plasma-enhanced chemical vapor deposition (PECVD). A high ion flux and suitable nitrogen flow rate improved the gas barrier properties and deposition rate of the resulting a-SiOxCyNz film. The a-SiOxCyNz films were deposited at a high deposition rate and low water WVTR properties as a result of the high ion flux and nitrogen chemistry. The high ion flux modified the chemical structure and nitrogen atomic composition of the resulting a-SiOxCyNz film coatings. The substrate temperature was characterized using a thermometer. In addition, the coating properties were characterized by Fourier transform infrared (FT-IR), X-ray photoelectron spectroscopy (XPS) and the water vapor transmission rate (WVTR). ► a-SiOxCyNz barrier films synthesized at low temperature (
ISSN:1567-1739
1878-1675
DOI:10.1016/j.cap.2013.01.001