Effect of series resistance and interface states on the I– V, C– V and G/ ω– V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature

• Published in: Current applied physics 2012, 12(1), , pp.266-272
• Main Authors: Demirezen, S., Sönmez, Z., Aydemir, U., Altındal, Ş.
• Format: Article
• Language: English
• Subjects: Au/PVA (Bi-doped)/n-Si; Barriers; Bias; Diodes; Electric potential; electric power; electrical properties; energy density; Frequency dependence; gold; Interface states; polyvinyl alcohol; Polyvinyl alcohols; Semiconductors; Series resistance; temperature; Volt-ampere characteristics; Voltage; 물리학
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2011.06.016

The forward and reverse bias current–voltage ( I– V), capacitance–voltage ( C– V) and conductance–voltage ( G/ ω– V) characteristics of the Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) have been investigated at room temperature by taking the interface states ( N ss) and series resistance ( R s) effects into account. The voltage dependent profiles of resistance ( R i ) were obtained from both the I– V and C/ G– V measurements by using Ohm’s Law and Nicollian methods. The obtained values of R i with agreement each other especially at sufficiently high bias voltages which correspond the value of R s of the diode. Therefore, the energy density distribution profile of N ss was obtained from the forward bias I– V data taking the bias dependence of the effective barrier height (BH) Φ e and R s into account. The high value of ideality factor ( n) was attributed to high density of N ss and interfacial polymer layer at metal/semiconductor ( M/ S) interface. In order to examine the frequency dependence of some of the electrical parameters such as doping donor concentration ( N D), Φ e, R s and N ss values, C– V and G/ ω– V measurements of the diode were performed at room temperature in the frequency range of 50 kHz–5 MHz. Experimental results confirmed that the N ss, R s and interfacial layer are important parameters that influence electrical characteristics of SBD. ► I–V, C–V and G/ω–V characteristics of the Au/PVA (Bi-doped)/n-Si SBDs were investigated. ► Frequency dependent interface states (Nss) and series resistance (Rs) profiles were determined. ► Admittance measurements were performed at room temperature in the frequency range of 50 kHz–5 MHz. ► Experimental results confirmed that the Nss and Rs are influence electrical characteristics of SBDs.