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Growth and characterization of indium oxide films

In2O3 films have been deposited using chemical spray pyrolysis technique at different substrate temperatures that varied in the range, 250–450°C. The structural and morphological properties of the as-deposited films were studied using X-ray diffractometer and scanning electron microscope as well as...

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Bibliographic Details
Published in:Current applied physics 2008, 8(2), , pp.120-127
Main Authors: Prathap, P., Devi, G. Gowri, Subbaiah, Y.P.V., Ramakrishna Reddy, K.T., Ganesan, V.
Format: Article
Language:English
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Summary:In2O3 films have been deposited using chemical spray pyrolysis technique at different substrate temperatures that varied in the range, 250–450°C. The structural and morphological properties of the as-deposited films were studied using X-ray diffractometer and scanning electron microscope as well as atomic force microscope, respectively. The films formed at a temperature of 400°C showed body-centered cubic structure with a strong (222) orientation. The structural parameters such as the crystallite size, lattice strain and texture coefficient of the films were also calculated. The films deposited at a temperature of 400°C showed an optical transmittance of >85% in the visible region. The change of resistivity, mobility, carrier concentration and activation energies with the deposition temperature was studied. The highest figure of merit for the layers grown at 400°C was 1.09×10−3Ω−1.
ISSN:1567-1739
1878-1675
DOI:10.1016/j.cap.2007.06.001