Normal-incidence far-infrared detectivity of InAs/GaAs QDIPs doped in dots and barriers

We report some comparative results on the normal-incidence device characteristics accomplished with a couple of self-assembled InAs/GaAs quantum-dot infrared photodetectors (QDIPs) doped in InAs QDs and GaAs barriers. The peak values of responsivity and detectivity for the barrier-doped device are 6...

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Bibliographic Details
Published in:Current applied physics 2006, 6(1), , pp.37-40
Main Authors: Lee, S.J., Noh, S.K., Hong, S.C., Lee, J.I.
Format: Article
Language:English
Subjects:
InAs/GaAs
Infrared photodetector
Quantum dot
물리학
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Summary:We report some comparative results on the normal-incidence device characteristics accomplished with a couple of self-assembled InAs/GaAs quantum-dot infrared photodetectors (QDIPs) doped in InAs QDs and GaAs barriers. The peak values of responsivity and detectivity for the barrier-doped device are 650 mA/W and 3.2 × 10 8 cm Hz 1/2/W (18 K) at λ p ≅ 5 μm, respectively, which are approximately two and ten times higher than those for the QD-doped one. In addition, while there is no spectral response over 6 μm in the QD-doped structure, a strong photoresponse is extended up to around 10 μm in the barrier-doped one. Although the direct doping in InAs QDs is effective for blocking the dark current, the doping in GaAs barriers has better device performance of QDIP.
ISSN:1567-1739
1878-1675
DOI:10.1016/j.cap.2004.12.001