Effect of deposition pressure on the electrical properties of nitrogen-doped amorphous carbon films

In this study, we investigate the effect of the deposition pressure on the electrical properties of nitrogen-doped amorphous carbon (a-C:N) films deposited by using an unbalanced DC magnetron sputtering method. As the deposition pressure is decreased from 9 to 1 mTorr, the resistivity decreases from...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2015, 67(4), , pp.638-642
Main Authors: Oh, Hyungon, Cho, Kyoungah, Kim, Sangsig
Format: Article
Language:English
Subjects:
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
물리학
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Summary:In this study, we investigate the effect of the deposition pressure on the electrical properties of nitrogen-doped amorphous carbon (a-C:N) films deposited by using an unbalanced DC magnetron sputtering method. As the deposition pressure is decreased from 9 to 1 mTorr, the resistivity decreases from 7.88 to 2.68 × 10 −2 Ω·cm while the deposition rate increases from 3.5 to 4.4 nm/min. The decrease in resistivity is caused by increases in both the carrier concentration and mobility. As the pressure is decreased, the carrier concentration increases from 1.9 × 10 14 to 7.8 × 10 20 cm −3 , and the mobility increases from 0.01 to 0.3 cm 2 /V·sec. X-ray photoelectron spectroscopy and Raman spectroscopy reveal that the improved electrical properties of the film deposited at a lower pressure are the result of a higher fraction of sp 2 bonding.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.67.638