Temperature dependence of the thermal conductivity of Gd2Zr2O7 thin films

Gd 2 Zr 2 O 7 has been known to be a promising candidate for a future thermal-barrier-coating material and for use as a buffer layer for YBa 2 Cu 3 O 7− x . This study focuses on Gd 2 Zr 2 O 7 films deposited on an Al 2 O 3 substrates by using radio-frequency magnetron sputtering, especially its the...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2015, 66(4), , pp.621-624
Main Authors: Kang, Jun Gu, Kwak, J. H., Yang, Ho-Soon
Format: Article
Language:English
Subjects:
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
물리학
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Summary:Gd 2 Zr 2 O 7 has been known to be a promising candidate for a future thermal-barrier-coating material and for use as a buffer layer for YBa 2 Cu 3 O 7− x . This study focuses on Gd 2 Zr 2 O 7 films deposited on an Al 2 O 3 substrates by using radio-frequency magnetron sputtering, especially its thermal conductivity at various temperatures from 80 K to 300 K. Prior to the measurement with the Gd 2 Zr 2 O 7 films, thermal conductivity measurements at low temperatures were performed with n-type Si and Al 2 O 3 whose thermal properties are well known. The thermal conductivity of the Gd 2 Zr 2 O 7 film increases as the temperature increases from 80 K to 300 K, and this temperature region is below its Debye temperature. The film exhibits a thermal conductivity lower than the value reported at room temperature.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.66.621