Advanced HVPE sublimation sandwich method for Si layer formation on SiC substrates

• Published in: Journal of the Korean Physical Society 2024, 85(10), , pp.810-824
• Main Authors: Park, Seonwoo, Kim, Kyoung Hwa, Mun, Suhyun, Jeon, Injun, Mun, Seon Jin, Cho, Young-Hun, Heo, Jeongbin, Yang, Min, Ahn, Hyung Soo, Jeon, Hunsoo, Lee, Jae Hak, Jung, Kwanghee, Lee, Won Jae, Lee, Geon-Hee, Shin, Myeong-Cheol, Oh, Jong-Min, Shin, Weon Ho, Kim, Minkyung, Koo, Sang-Mo, Kang, Ye Hwan
• Format: Article
• Language: English
• Subjects: Amorphous silicon; Atomic properties; Epitaxial growth; Mathematical and Computational Physics; Microscopy; Original Paper - Condensed Matter; Particle and Nuclear Physics; Photoelectrons; Physics; Physics and Astronomy; Secondary ion mass spectrometry; Silicon carbide; Silicon substrates; Sublimation; Theoretical; Vapor phase epitaxy; X ray photoelectron spectroscopy; 물리학
• ISSN: 0374-4884; 1976-8524
• DOI: 10.1007/s40042-024-01170-z

An advanced hydride vapor-phase epitaxy (HVPE) method was used to improve the sublimation sandwich method for the formation of Si layers on SiC substrates. In this study, a graphite boat structure with a vertical source and growth zones was used, and the sublimation sandwich method was improved by directly attaching two substrates (without any spacing between them) differently from that of the existing sublimation sandwich method. After the deposition of the amorphous Si layer (using sputtering) on an SiC substrate, the recrystalline Si layer was formed at a temperature of 1250 °C using a SiCl n source. Consequently, an Si layer with characteristics different from those of the sputtered Si layer was grown. The formed Si layer was characterized using field-emission scanning electron microscopy, energy-dispersive spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy. Overall, we propose an advanced HVPE sublimation sandwich method for forming Si layers on SiC substrates.