Complex oxide thin films: A review on pulsed laser epitaxy growth

Pulsed laser epitaxy (PLE) has emerged as a pivotal technique in the fabrication of complex oxide thin films, offering unprecedented control over material composition and myriads of properties. Complex oxides exhibit various functionalities, such as high-Tc superconductivity, colossal magnetoresista...

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Bibliographic Details
Published in:Current applied physics 2024, 68(0), , pp.113-130
Main Authors: Kim, Yunzyne, Choi, Yeongju, Lee, Sang A, Choi, Woo Seok, Kang, Kyeong Tae
Format: Article
Language:English
Subjects:
Complex oxide thin film
Deposition
Heterostructure
Pulsed laser epitaxy
Single crystal
물리학
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Summary:Pulsed laser epitaxy (PLE) has emerged as a pivotal technique in the fabrication of complex oxide thin films, offering unprecedented control over material composition and myriads of properties. Complex oxides exhibit various functionalities, such as high-Tc superconductivity, colossal magnetoresistance, and ferroelectricity, making them essential for advanced electromagnetic and optical applications. PLE facilitates the epitaxial growth of complex oxides using a high-power pulsed laser to ablate a solid target, generating a plume of material that is deposited onto a heated substrate. The process is highly adaptable and capable of achieving stoichiometric material in thin film form with high quality. This review explores the fundamental principles, system configurations, and essential growth parameters of PLE and highlights its role in advancing the field of complex oxide thin films. •Pulsed laser epitaxy (PLE) enables precise control over complex oxide film growth.•PLE facilitates the epitaxial growth of high-quality stoichiometric oxide films.•PLE uses a high-power pulsed laser to ablate a target, depositing material.•Key PLE parameters include substrate, laser energy, pressure, and temperature.
ISSN:1567-1739
1567-1739
DOI:10.1016/j.cap.2024.09.001