Back-thinning process research and characteristics measurement of thin sensor

It is important to develop a thin silicon detector using a large silicon wafer to reduce multiple Coulomb scattering and the material budget. A Si-CsI detector in a large acceptance multi-purpose spectrometer (LAMPS) is considered to identify isotopes. The thickness of the first of three silicon sen...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the Korean Physical Society 2015, 67(12), , pp.2065-2069
Main Authors: Jeon, H. B., Kang, K. H., Park, H., Park, Kun-Sik
Format: Article
Language:English
Subjects:
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
물리학
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:It is important to develop a thin silicon detector using a large silicon wafer to reduce multiple Coulomb scattering and the material budget. A Si-CsI detector in a large acceptance multi-purpose spectrometer (LAMPS) is considered to identify isotopes. The thickness of the first of three silicon sensors in front of the CsI(Tl) crystal is 100 μ m. We aim to establish a manufacturing process for thinning using a 6-inch silicon wafer that provides the characteristics of a photodiode. In this paper, we present a back-thinning process of the photodiode, and comparisons of its electrical characteristics and signal-to-noise ratios before and after the thinning process.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.67.2065