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Optimization of the p+-ZnTe layer for back contacts of ZnTe thin-film solar cells
We have studied the performance of ZnTe-based heterojunction diodes grown on p-GaAs substrates by using pulsed laser deposition (PLD). In the X-ray diffraction measurements, ZnTe and CdS thin films grown on p-GaAs (100) substrates appeared to have a cubic crystalline structure while the ZnO film sho...
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Published in: | Journal of the Korean Physical Society 2016, 69(3), , pp.416-420 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We have studied the performance of ZnTe-based heterojunction diodes grown on p-GaAs substrates by using pulsed laser deposition (PLD). In the X-ray diffraction measurements, ZnTe and CdS thin films grown on p-GaAs (100) substrates appeared to have a cubic crystalline structure while the ZnO film showed a hexagonal structure. The structure of n
+
-ZnO/i-ZnTe/p-GaAs with insertion of a CdS buffer layer between n
+
-ZnO and i-ZnTe showed strong rectifying diode characteristics, and its open-circuit voltage (V
oc
) and short-circuit current density (J
sc
) under 1,000 Wm
−2
air mass 1.5 global (AM 1.5G) illumination were measured about 0.32 V and 0.61 mAcm
−2
, respectively. When an inserted another layer, a ZnTe:Cu layer, as a p
+
-layer for the contacts on p-GaAs substrate, the value of V
oc
and J
sc
of the n
+
-ZnO/CdS/i-ZnTe/ZnTe:Cu/p-GaAs structure increased to 0.39 V and 0.81 mA/cm2, respectively. As the thickness of i-ZnTe were increased from 210 to 420 nm, the photoelectric conversion efficiency of the n
+
-ZnO/CdS/i-ZnTe/ZnTe:Cu/p-GaAs structure increased to 0.24%. |
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ISSN: | 0374-4884 1976-8524 |
DOI: | 10.3938/jkps.69.416 |