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Optimization of the p+-ZnTe layer for back contacts of ZnTe thin-film solar cells

We have studied the performance of ZnTe-based heterojunction diodes grown on p-GaAs substrates by using pulsed laser deposition (PLD). In the X-ray diffraction measurements, ZnTe and CdS thin films grown on p-GaAs (100) substrates appeared to have a cubic crystalline structure while the ZnO film sho...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2016, 69(3), , pp.416-420
Main Authors: Lee, Kyoung Su, Oh, Gyujin, Kim, Eun Kyu
Format: Article
Language:English
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Summary:We have studied the performance of ZnTe-based heterojunction diodes grown on p-GaAs substrates by using pulsed laser deposition (PLD). In the X-ray diffraction measurements, ZnTe and CdS thin films grown on p-GaAs (100) substrates appeared to have a cubic crystalline structure while the ZnO film showed a hexagonal structure. The structure of n + -ZnO/i-ZnTe/p-GaAs with insertion of a CdS buffer layer between n + -ZnO and i-ZnTe showed strong rectifying diode characteristics, and its open-circuit voltage (V oc ) and short-circuit current density (J sc ) under 1,000 Wm −2 air mass 1.5 global (AM 1.5G) illumination were measured about 0.32 V and 0.61 mAcm −2 , respectively. When an inserted another layer, a ZnTe:Cu layer, as a p + -layer for the contacts on p-GaAs substrate, the value of V oc and J sc of the n + -ZnO/CdS/i-ZnTe/ZnTe:Cu/p-GaAs structure increased to 0.39 V and 0.81 mA/cm2, respectively. As the thickness of i-ZnTe were increased from 210 to 420 nm, the photoelectric conversion efficiency of the n + -ZnO/CdS/i-ZnTe/ZnTe:Cu/p-GaAs structure increased to 0.24%.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.69.416