Electrical properties of MgxZn1−xO thin films deposited by using RF magnetron co-sputtering with ZnO and Mg0.3Zn0.7O targets

• Published in: Journal of the Korean Physical Society 2016, 68(5), , pp.686-691
• Main Authors: Yue, Li Li, Yang, Yi Da, Kim, Hong Seung, Jang, Nak Won, Yun, Young
• Format: Article
• Language: English
• Subjects: Mathematical and Computational Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Theoretical; 물리학
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.68.686

We successfully deposited hexagonal wurtzite Mg x Zn 1− x O (0 ≤ x ≤ 0.18) films on Si substrates by using RF magnetron co-sputtering with ZnO and Mg 0.3 Zn 0.7 O targets. The Mg content was varied by controlling the RF power of the Mg 0.3 Zn 0.7 O target while the RF power of the ZnO target was fixed at 100 W. The electrical properties of the Mg x Zn 1− x O films were investigated by using a transmission line model (TLM) with Ti/Au electrode and Hall effect measurements. The X-ray diffraction (XRD) results demonstrate that some Zn atoms can be replaced by Mg atoms in the Mg x Zn 1− x O films. As the Mg content was increased from 0 at.% to 18 at.%, the resistivity of Mg x Zn 1− x O films increased and the carrier concentration decreased from 1.17 × 10 19 cm −3 to 1.17 × 10 17 cm −3 , which indicates a decrease in the number of oxygen vacancies. Meanwhile, the Hall mobility increased to 15.3 cm 2 /Vs. The electrical properties of Mg x Zn 1− x O films were tuned by using the Mg content.