K-doping effects on the characteristics of ZnO thin films synthesized by using a spin-coating method

Zinc-oxide (ZnO) thin films doped with various amounts of potassium were synthesized on quartz substrates by using the sol-gel method. The effects of K-doping on the structural and optical properties of the resultant ZnO thin films were investigated using X-ray diffraction (XRD), Ultravioletvisible...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2014, 64(10), , pp.1581-1585
Main Authors: Ji, Iksoo, Kim, Younggyu, Leem, Jae-Young, Park, Hyunggil, Kim, Soaram, Kim, Jong Su, Kim, Jin Soo
Format: Article
Language:English
Subjects:
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
물리학
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Summary:Zinc-oxide (ZnO) thin films doped with various amounts of potassium were synthesized on quartz substrates by using the sol-gel method. The effects of K-doping on the structural and optical properties of the resultant ZnO thin films were investigated using X-ray diffraction (XRD), Ultravioletvisible (UV) spectroscopy, and photoluminescence (PL) spectroscopy. From the XRD results, the full width at half maximum (FWHM) for ZnO (002) and the grain size was measured. In the transmittance spectra, all the K-doped ZnO thin films were found to exhibit a high transmittance in the visible region. The optical band gap of the thin films was also determined from the transmittance results. The PL spectra showed near-band-edge (NBE) emission peaks in the UV region and deep-level emission (DLE) peaks of around 640 nm. The PL peak intensities of both the NBE emission and the DLE were found to change with varying concentrations of K.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.64.1581