Thermoelectric properties of Bi-doped Mg2Si1−xSnx prepared by mechanical alloying

Bi-doped Mg 2 Si 1− x Sn x solid solutions were prepared by mechanical alloying and hot pressing. The lattice constant increased and the electrical conduction behavior changed from n-type to p-type with increasing Sn content. The electrical conductivity increased with increasing Sn content at a spec...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the Korean Physical Society 2013, 63(11), , pp.2153-2157
Main Authors: You, Sin-Wook, Kim, Il-Ho, Choi, Soon-Mok, Seo, Won-Seon
Format: Article
Language:English
Subjects:
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
물리학
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Bi-doped Mg 2 Si 1− x Sn x solid solutions were prepared by mechanical alloying and hot pressing. The lattice constant increased and the electrical conduction behavior changed from n-type to p-type with increasing Sn content. The electrical conductivity increased with increasing Sn content at a specific temperature. Bi-doped Mg 2 Si 1− x Sn x solid solutions showed n-type conduction, and the carrier concentration was increased because of doped Bi acting as donors. The absolute value of the Seebeck coefficient decreased with increasing temperature. The lowest thermal conductivity of 1.3–1.5 W/mK was obtained by Bi doping. Mg 2 Si 0.7 Sn 0.3 :Bi 0.01 exhibited a maximum figure of merit (ZT) of 0.65 at 823 K.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.63.2153