Enhanced piezoelectric properties of lead-free 0.935(Bi0.5Na0.5)TiO3-0.065BaTiO3 thin films fabricated by using pulsed laser deposition

0.935(Bi 0.5 Na 0.5 )TiO 3 -0.065BaTiO 3 (BNT-BT) thin films have been grown on Pt(111)/Ti/SiO 2 /Si substrates by using a pulsed laser deposition method. Deposition conditions of oxygen pressure and deposition temperature were changed. The BNT-BT thin film deposited at 750 °C and 300 mTorr exhibite...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2013, 62(7), , pp.1031-1034
Main Authors: Park, J. S., Lee, M. H., Kim, D. J., Do, D., Kim, M. -H., Kim, J. S., Song, T. K., Kim, S. W., Choi, H. I., Jang, K. W., Hwang, I. R., Park, B. H.
Format: Article
Language:English
Subjects:
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
물리학
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Summary:0.935(Bi 0.5 Na 0.5 )TiO 3 -0.065BaTiO 3 (BNT-BT) thin films have been grown on Pt(111)/Ti/SiO 2 /Si substrates by using a pulsed laser deposition method. Deposition conditions of oxygen pressure and deposition temperature were changed. The BNT-BT thin film deposited at 750 °C and 300 mTorr exhibited a slim hysteresis loop with a remnant polarization (2 P r ) of 11 µC/cm 2 and a low leakage current density of 7.3 × 10 −5 A/cm 2 at 98 kV/cm. The piezoelectric responses of the thin films were investigated using piezoelectric force microscopy with a lock-in amplifier. The thin films exhibited piezoelectric properties with a d 33, f value of 168 pm/V.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.62.1031