Effects of Mg incorporation by co-sputtering into the ZnO channel layer of thin-film transistors

We fabricated a series of ZnO-based thin-film transistors (TFTs) in which the Mg composition ratio in the active layer was varied by controlling the RF power applied to the ZnO and the Mg 0.3 Zn 0.7 O targets. Mg x Zn 1− x O alloy films were deposited by RF co-sputtering onto a SiO 2 /n + -Si substr...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2013, 62(6), , pp.937-941
Main Authors: Lee, Jong Hoon, Kim, Chang Hoi, Kim, Hong Seung, Jang, Nak Woon, Yun, Young, Do, Lee Mi, Baek, Kyu Ha
Format: Article
Language:English
Subjects:
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
물리학
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Summary:We fabricated a series of ZnO-based thin-film transistors (TFTs) in which the Mg composition ratio in the active layer was varied by controlling the RF power applied to the ZnO and the Mg 0.3 Zn 0.7 O targets. Mg x Zn 1− x O alloy films were deposited by RF co-sputtering onto a SiO 2 /n + -Si substrate at 300 °C. The Mg content in each ZnO film was measured and the band gaps were found to increase from 3.27 to 3.93 eV with increasing Mg content. The field effect mobility and the on/off ratio were decreased from 9.12 cm 2 V −1 s −1 and 10 9 to 3.11 cm 2 V −1 s −1 and 10 8 , respectively, as Mg incorporation was increased. We report the feasibility of Mg incorporation by using a cosputtering technique, and the electrical and the structural properties of the TFT ZnO active layer as a function of Mg content are discussed.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.62.937