Characterization of epitaxial EuS(111) thin films on BaF2(111) and SrF2(111) substrates grown by molecular beam epitaxy

• Published in: Journal of the Korean Physical Society 2013, 62(12), , pp.2109-2112
• Main Authors: Senba, Shinya, Matsumoto, Naoki, Jomura, Mitsuhiro, Asada, Hironori, Koyanagi, Tsuyoshi, Kishimoto, Kengo, Fukuma, Yasuhiro
• Format: Article
• Language: English
• Subjects: Mathematical and Computational Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Theoretical; 물리학
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.62.2109

We have successfully grown EuS (111) epitaxial films on BaF 2 (111) and SrF 2 (111) substrates by using molecular beam epitaxy at substrate temperatures ( T S ’s) between 100 and 500 °C. Pole figures of X-ray diffraction indicate a high degree of in-plane orientation, and all of the samplesshow very high resistivity. The surface roughness for 10-nm-thick EuS films on BaF 2 (111) and SrF 2 (111) substrates measured by using atomic force microscopy (AFM) are 0.122 and 0.092 nm, respectively. The Curie temperature of the EuS films increases up to ∼16 K with increasing T S . We also try to manipulate the coercive force, which is an important magnetic property, by Te-doping to achieve an anti-parallel magnetization state between two ferromagnetic layers in spin devices. The obtained coercive force for the Te-doped film (110 Oe) is large compared with that for the undoped one (20 Oe).