Electrical measurements of an AlGaN/GaN high-electron-mobility transistor structure grown on Si

• Published in: Journal of the Korean Physical Society 2012, 61(9), , pp.1471-1475
• Main Authors: Zhang, Zhi-Yao, Lo, Shun-Tsung, Lin, Li-Hung, Chen, Kuang Yao, Huang, J. Z., Sun, Zhi-Hao, Liang, C. -T., Chen, N. C., Chang, Chin-An, Chang, P. H.
• Format: Article
• Language: English
• Subjects: Mathematical and Computational Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Theoretical; 물리학
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.61.1471

We report on magnetotransport results for an Al 0.15 Ga 0.85 N/GaN high-electron-mobility-transistor structure grown on a p -type Si (111) substrate. Our results show that there exists an approximately temperature ( T )-independent point, which could be ascribed to a direct transition from a weak insulator to a high Landau level filling factor quantum Hall state, exists in the longitudinal resistivity ρ xx . The Hall resistivity decreases with increasing T , compelling experimental evidence for electron-electron interaction effects in a weakly-disordered two-dimensional (2D) system. We find that electron-electron interaction effects can be estimated and eliminated, giving rise to a corrected nominally temperature-independent Hall slope. By fitting the low-field magnetotransport data to conventional 2D weak localization theory, we find that the dephasing rate 1/τ ϕ is proportional to T . Moreover, 1/τ ϕ is finite as T → 0, evidence for zero-temperature dephasing in our system.