Threshold voltage control for SnO2 nanowire transistors by gas treatment

• Published in: Journal of the Korean Physical Society 2012, 61(8), , pp.1287-1291
• Main Authors: Kim, Sangdan, Ju, Sanghyun
• Format: Article
• Language: English
• Subjects: Mathematical and Computational Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Research Papers; Theoretical; 물리학
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.61.1287

If nanowire transistors are to be applied to next-generation electronic devices, controlling their characteristics is crucial. In particular, the threshold voltage ( V th ) must be controlled because it determines the driving voltage of the transistors. In this research, we were able to control the V th characteristics in both the negative and the positive directions by performing H 2 and O 2 gas treatments at room temperature; this control was achieved because oxygen vacancies on the surfaces of the oxide nanowire channel regions could be controlled with the treatments. The H 2 treatment changed V th in the negative direction with increasing processing time (−0.6 V at 10 min; −0.9 V at 30 min; and −1.4 V at 60 min), whereas the O 2 treatment changed V th in the positive direction regardless of the processing time (+0.73 V at 10 min; +0.85 V at 30 min; +0.84 V at 60 min). This method can be applied to display-pixel and digital-logic circuits, especially those that employ nanowire transistors and require V th control.