Comparison of light emission in InGaN/GaN light-emitting diodes with graded, triangular, and parabolic quantum-well structures

The light emission properties of InGaN/GaN quantum well (QW) light-emitting diodes with non-square layers with graded, triangular, and parabolic shapes are investigated using multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The spontaneo...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2012, 60(3), , pp.505-508
Main Authors: Park, Seoung-Hwan, Moon, Yong-Tae, Han, Dae-Seob, Park, Joong Seo, Oh, Myeong-Seok, Ahn, Doyeol
Format: Article
Language:English
Subjects:
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
물리학
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Summary:The light emission properties of InGaN/GaN quantum well (QW) light-emitting diodes with non-square layers with graded, triangular, and parabolic shapes are investigated using multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The spontaneous emission peak of non-square QW structures is shown to be improved compared to a conventional QW structure. In particular, the parabolic QW structures shows a slightly larger emission peak than the graded or triangular QW structure. This can be explained by the fact that a smaller In composition in the well is needed to give a transition wavelength of 440 nm.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.60.505