Effect of silicon-nanoparticle addition on the nanostructure of polythiophene: Fullurene bulk heterojunction solar cells

We investigated the nanostructure change in bulk heterojunction films of poly(3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C 61 (PCBM) before and after adding silicon nanoparticles (SiNP) by employing synchrotron radiation grazing incidence-angle X-ray diffraction (GIXD) t...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2012, 61(2), , pp.234-238
Main Authors: Kim, Joonhyeon, Nam, Sungho, Jeong, Jaehoon, Kim, Hwajeong, Kim, Youngkyoo
Format: Article
Language:English
Subjects:
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
물리학
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Summary:We investigated the nanostructure change in bulk heterojunction films of poly(3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C 61 (PCBM) before and after adding silicon nanoparticles (SiNP) by employing synchrotron radiation grazing incidence-angle X-ray diffraction (GIXD) techniques. The GIXD results showed a gradual reduction of the P3HT (100) diffraction intensity in the out-of-plane (OOP) direction as the SiNP content was increased. Interestingly, a (100) intensity in the in-plane (IP) direction newly appeared when a small amount of SiNP was added, but it faded at higher SiNP contents. In particular, the addition of 2 wt.% SiNP increased the (100) intensity in both the OOP and the IP directions, leading to improved solar cell performance due to enhanced charge transport in the P3HT domains.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.61.234