Effect of conditioner load on the polishing pad surface during chemical mechanical planarization process

During the Chemical mechanical planarization (CMP), the pad conditioning process can affect the pad surface characteristics. Among many CMP process parameters, the improper applied load on the conditioner arm may have adverse effects on the polyurethane pad. In this work, we evaluated the pad surfac...

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Bibliographic Details
Published in:Journal of mechanical science and technology 2016, 30(12), , pp.5659-5665
Main Authors: Shin, Cheolmin, Qin, Hongyi, Hong, Seokjun, Jeon, Sanghyuk, Kulkarni, Atul, Kim, Taesung
Format: Article
Language:English
Subjects:
Chemical-mechanical polishing
Conditioners
Conditioning
Control
Dynamical Systems
Engineering
Industrial and Production Engineering
Material removal rate (machining)
Mechanical Engineering
Planarization
Polishing
Polyurethane resins
Process parameters
Surface properties
Surface roughness
Topography
Vibration
기계공학
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Summary:During the Chemical mechanical planarization (CMP), the pad conditioning process can affect the pad surface characteristics. Among many CMP process parameters, the improper applied load on the conditioner arm may have adverse effects on the polyurethane pad. In this work, we evaluated the pad surface properties under the various conditioner arm applied during pad conditioning process. The conditioning pads were evaluated for surface topography, surface roughness parameters such as Rt and Rvk and Material removal rate (MRR) and within-wafer non-uniformity after wafer polishing. We observed that, the pad asperities were collapsed in the direction of conditioner rotation and blocks the pad pores applied conditioner load. The Rvk value and MRR were founded to be in relation with 4 > 1 > 7 kgF conditioner load. Hence, this study shows that, 4 kgF applied load by conditioner is most suitable for the pad conditioning during CMP.
ISSN:1738-494X
1976-3824
DOI:10.1007/s12206-016-1135-0