Fully transparent, non-volatile bipolar resistive memory based on flexible copolyimide films

• Published in: Electronic materials letters 2017, 13(1), , pp.1-8
• Main Authors: Yu, Hwan-Chul, Kim, Moon Young, Hong, Minki, Nam, Kiyong, Choi, Ju-Young, Lee, Kwang-Hun, Baeck, Kyoung Koo, Kim, Kyoung-Kook, Cho, Soohaeng, Chung, Chan-Moon
• Format: Article
• Language: English
• Subjects: Aliphatic compounds; Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed Matter Physics; Data storage; Hogs; Materials Science; Memory devices; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; Switching; 전자/정보통신공학
• ISSN: 1738-8090; 2093-6788
• DOI: 10.1007/s13391-017-6148-z

Partially aliphatic homopolyimides and copolyimides were prepared from rel-(1′R,3S,5′S)-spiro[furan-3(2H),6′-[3]oxabicyclo[3.2.1]octane]-2,2′,4′,5(4H)-tetrone (DAn), 2,6-diaminoanthracene (AnDA), and 4,4′-oxydianiline (ODA) by varying the molar ratio of AnDA and ODA. We utilized these polyimide films as the resistive switching layer in transparent memory devices. While WORM memory behavior was obtained with the PI-A100-O0-based device (molar feed ratio of DAn : AnDA : ODA = 1 : 1 : 0), the PI-A70-O30-based device (molar feed ratio of DAn : AnDA : ODA = 1 : 0.7 : 0.3) exhibited bipolar resistive switching behavior with stable retention for 10 4 s. This result implies that the memory properties can be controlled by changing the polyimide composition. The two devices prepared from PI-A100-O0 and PI-A70-O30 showed over 90% transmittance in the visible wavelength range from 400 to 800 nm. The behavior of the memory devices is considered to be governed by trap-controlled, space-charge limited conduction (SCLC) and local filament formation.