Fabrication and electrical characterization of planar lighting devices with Cs3Sb photocathode emitters

Non-vacuum process technology was used to produce Cs 3 Sb photocathodes on substrates, and in-situ panel devices were fabricated. The performance of the devices was characterized by measuring the anode current as functions of the devices’ operation times. An excitation light source with a 475-nm wav...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2017, 70(6), , pp.610-614
Main Authors: Jeong, Hyo-Soo, Keller, Kris, Culkin, Brad
Format: Article
Language:English
Subjects:
Adsorbates
Devices
Electrical properties
Electron bombardment
Emitters
Emitters (electron)
Ion bombardment
Mathematical and Computational Physics
Measuring instruments
Outgassing
Particle and Nuclear Physics
Photocathodes
Physics
Physics and Astronomy
Substrates
Theoretical
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Summary:Non-vacuum process technology was used to produce Cs 3 Sb photocathodes on substrates, and in-situ panel devices were fabricated. The performance of the devices was characterized by measuring the anode current as functions of the devices’ operation times. An excitation light source with a 475-nm wavelength was used for the photocathodes. The device has a simple diode structure, providing unique characteristics such as a large gap, vertical electron beam directionality, and resistance to surface contamination from ion bombardment and poisoning by outgassing species. Accordingly, Cs 3 Sb photocathodes function as flat emitters, and the emission properties of the photocathode emitters depend on the vacuum level of the devices. An improved current stability has been observed after conducting an electrical conditioning process to remove possible adsorbates on the Cs 3 Sb flat emitters.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.70.610