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Thermal Analysis and Design of AlGaInP-based Light Emitting Diode Arrays

LED arrays with pixel numbers of 3 × 3 , 4 × 4 , and 5 × 5 have been studied in this paper in order to enhance the optical output power and decrease heat dissipation of an AlGaInP-based light emitting diode display device (pixel size of 280 × 280 μ m ) fabricated by micro-opto-electro-mechanical sys...

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Bibliographic Details
Published in:Current optics and photonics 2017, 1(2), , pp.143-149
Main Authors: Ban, Zhang, Liang, Zhongzhu, Liang, Jingqiu, Wang, Weibiao, JinguangLv, JinguangLv, Qin, Yuxin
Format: Article
Language:English
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Summary:LED arrays with pixel numbers of 3 × 3 , 4 × 4 , and 5 × 5 have been studied in this paper in order to enhance the optical output power and decrease heat dissipation of an AlGaInP-based light emitting diode display device (pixel size of 280 × 280 μ m ) fabricated by micro-opto-electro-mechanical systems. Simulation results showed that the thermal resistances of the 3 × 3 , 4 × 4 , 5 × 5 arrays were 52 ∘ C / W , 69.7 ∘ C / W , and 84.3 ∘ C / W . The junction temperature was calculated by the peak wavelength shift method, which showed that the maximum value appears at the center pixel due to thermal crosstalk from neighboring pixels. The central temperature would be minimized with 40 μ m pixel pitch and 150 μ m substrate thickness as calculated by thermal modeling using finite element analysis. The modeling can be used to optimize parameters of highly integrated AlGaInP-based LED arrays fabricated by micro-opto-electro-mechanical systems technology.
ISSN:2508-7266
2508-7274
DOI:10.3807/COPP.2017.1.2.143