Structural and electrical properties of Zn1.10CuxMn1.90-xO4 (0 ≤ x ≤ 0.15) for application in IR detectors

• Published in: Electronic materials letters 2017, 13(3), , pp.235-239
• Main Authors: Kim, Kyeong-Min, Lee, Sung-Gap, Lee, Dong-Jin, Kwon, Min-Su
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed Matter Physics; Copper; Diffraction patterns; Electrical properties; Grain size; Manganese; Materials Science; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; Room temperature; 전자/정보통신공학
• ISSN: 1738-8090; 2093-6788
• DOI: 10.1007/s13391-017-1605-2

In this study, Zn 1.10 Cu x Mn 1.90-x O 4 (0 ≤ x ≤ 0.15) systems were prepared through the conventional solid state reaction method. All specimens were sintered in air at 1200 °C for 12 h and cooled at a rate of 2 °C/min to 800 °C, subsequently quenching to room temperature. Structural investigations were carried out using X-ray diffraction patterns and energy dispersive spectrometry. For x ≥ 0.10, formation of a tetragonal phase with a Zn-rich Zn-Cu-Mn-O segregated second phase was observed. In the microstructure, the grain size increased from 5.10 μm to 9.68 μm with an increase in Cu content. The resistivity at room temperature, B-value, responsivity and detectivity of the Zn 1.10 Cu 0.05 Mn 1.85 O 4 specimen were found to be 300.2 kΩ·cm, 4665, 0.025 V/W, and 2.12 ×10 4 cmHz 1/2 /W, respectively.