Effects of P3HT concentration on the electrical properties of the Au/PEDOT:PSS/P3HT/n-GaN hybrid junction structure

An inorganic-organic hybrid junction has been fabricated by spin coating the p-type poly(3- hexylthiophene-2,5-diyl)(P3HT) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT: PSS) on an n-type GaN layer. The GaN layer was formed on Al 2 O 3 by metal organic chemical vapor deposition(...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2017, 71(6), , pp.349-354
Main Authors: Noh, Ji-yeon, Lee, Ha Young, Lim, Kyung-won, Ahn, Hyung Soo, Yi, Sam Nyung, Jeon, Hunsoo, Shin, Min Jeong, Yu, Young Moon, Ha, Dong Han
Format: Article
Language:English
Subjects:
Aluminum oxide
Current voltage characteristics
Electrical properties
Electronic devices
Gallium nitrides
Hybrid structures
Mathematical and Computational Physics
Metalorganic chemical vapor deposition
Optoelectronic devices
Organic chemicals
Particle and Nuclear Physics
Physics
Physics and Astronomy
Spin coating
Theoretical
Thermionic emission
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Summary:An inorganic-organic hybrid junction has been fabricated by spin coating the p-type poly(3- hexylthiophene-2,5-diyl)(P3HT) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT: PSS) on an n-type GaN layer. The GaN layer was formed on Al 2 O 3 by metal organic chemical vapor deposition(MOCVD) method. To investigate the effects of P3HT concentration on the electrical properties, we changed P3HT solution concentration and speed of spin coater. The currentvoltage (I-V ) characteristic of Au/PEDOT:PSS/P3HT/n-GaN shows rectifying behavior. The I-V characteristic was examined in the frame work of the thermionic emission model. The most proper rectifying behavior was obtained for 0.6 wt% and thickness below 65 nm of P3HT used diode. We expect that such hybrid structures, suitably developed, might be enable the fabrication of highquality electronic and optoelectronic devices.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.71.349