Influence of CdTe thickness on structural and optical properties of CdTe/ZnTe quantum dots on Si substrates

We have investigated the influence of CdTe thickness on the structural and optical properties of CdTe/ZnTe quantum dots (QDs) on Si substrates using molecular beam epitaxy and atomic layer epitaxy (ALE). Atomic force microscopy images reveal that CdTe QDs are formed after being embedded in an undope...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2018, 72(2), , pp.294-299
Main Authors: Lim, Kee Hong, Choi, Jin Chul, Man, Minh Tan, Lee, Hong Seok
Format: Article
Language:English
Subjects:
Atomic force microscopy
Atomic layer epitaxy
Cadmium tellurides
Mathematical and Computational Physics
Molecular beam epitaxy
Optical properties
Particle and Nuclear Physics
Photoluminescence
Physics
Physics and Astronomy
Quantum dots
Silicon substrates
Temperature dependence
Theoretical
Thickness
Zinc tellurides
물리학
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Summary:We have investigated the influence of CdTe thickness on the structural and optical properties of CdTe/ZnTe quantum dots (QDs) on Si substrates using molecular beam epitaxy and atomic layer epitaxy (ALE). Atomic force microscopy images reveal that CdTe QDs are formed after being embedded in an undoped ZnTe matrix, which was controlled by the ALE method. As the size of QDs increases, the photoluminescence (PL) peak shifts towards lower energy and the full-width-at-halfmaximum increases. Through temperature-dependent PL, the increase in activation energy with increasing QD size was confirmed. From this study, the different structural and optical properties of QDs deposited on Si substrates could be understood.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.72.294