Reduction of hysteresis in solution-processed InGaZnO thin-film transistors through uni-directional pre-annealing

• Published in: Journal of the Korean Physical Society 2018, 72(2), , pp.270-275
• Main Authors: Kim, Young-Rae, Kwon, Jin-Hyuk, Vincent, Premkumar, Kim, Do-Kyung, Jeong, Hyeon-Seok, Hahn, Joonku, Bae, Jin-Hyuk, Park, Jaehoon
• Format: Article
• Language: English
• Subjects: Annealing; Current carriers; Defect annealing; Hysteresis; Mathematical and Computational Physics; Metal oxide semiconductors; Particle and Nuclear Physics; Physics; Physics and Astronomy; Semiconductor devices; Theoretical; Thin film transistors; Transistors; 물리학
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.72.270

The hysteresis of the solution-processed oxide thin-film transistors (TFTs) is fatal issue to interrupt stable operation. So, we came up with uni-directional pre-annealing to solve the problem. There are inevitable defects when solution-processed oxide TFTs are fabricated, due to the porosities by the solvent volatilization. Also oxygen vacancies needed for carrier generation in metal oxide semiconductor can be trap states inducing charge carrier trapping. Uni-directional pre-annealing improved the hysteresis, preventing randomly solvent evaporation and decreased the defects of the film. We can result in advanced stability of the solution-processed oxide TFTs, at the same time showing that the field effect mobility was enhanced from 3.35 cm 2 /Vs to 4.78 cm 2 /Vs simultaneously, and exhibiting better subthreshold swing from 0.89 V/dec to 0.23 V/dec.