A Broadband On-chip Power Divider up to W-band with Three-dimensional Three-coupled Lines

A state-of-the-art broadband on-chip power divider in millimeter-wave up to 103 GHz is presented. The power divider employs novel three-dimensional (3-D) three-coupled lines to achieve the desired mode impedances for an extremely wideband characteristic. The power divider was implemented in TSMC 180...

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Bibliographic Details
Published in:Journal of semiconductor technology and science 2018, 18(1), 79, pp.36-41
Main Authors: Dang, Trung-Sinh, Doan, Nhut-Tan, Kim, Byung-Sung, Kim, Nam-Yoon, Kim, Chang-Woo, Yoon, Sang-Woong
Format: Article
Language:English
Subjects:
전기공학
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Summary:A state-of-the-art broadband on-chip power divider in millimeter-wave up to 103 GHz is presented. The power divider employs novel three-dimensional (3-D) three-coupled lines to achieve the desired mode impedances for an extremely wideband characteristic. The power divider was implemented in TSMC 180 nm RF CMOS IC technology with six metal layers. Measurements show the absolute bandwidth from 11 to 103 GHz with matching conditions of all of the ports and isolation between two outputs of less than -10 dB. The fractional bandwidth is 161.4%. The insertion loss is between 1.2 and 7.9 dB across the overall bandwidth. The core size of the power divider is 0.18 mm × 0.68 mm. KCI Citation Count: 0
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2018.18.1.036