Submonolayer Quantum Dots for Optoelectronic Devices

Semiconductor quantum dots (QD) have been extensively applied in optical and optoelectronic devices because of their strong quantum confinement and bandgap tunability. Most research has focused on the design, material growth, and characterization of self-assembled QDs grown by Stranski- Krastanov (S...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2018, 73(6), , pp.833-840
Main Authors: Kim, Yeongho, Kim, Jun Oh, Lee, Sang Jun, Noh, Sam Kyu
Format: Article
Language:English
Subjects:
Energy gap
JKPS 50th Anniversary Reviews
Material properties
Mathematical and Computational Physics
Optoelectronic devices
Particle and Nuclear Physics
Photometers
Photovoltaic cells
Physics
Physics and Astronomy
Quantum confinement
Quantum dots
Review Articles
Self-assembly
Solar cells
Theoretical
물리학
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Summary:Semiconductor quantum dots (QD) have been extensively applied in optical and optoelectronic devices because of their strong quantum confinement and bandgap tunability. Most research has focused on the design, material growth, and characterization of self-assembled QDs grown by Stranski- Krastanov (S-K) growth mode. As an alternative to S-K QDs, sub-monolayer (SML) QDs have recently attracted much attention due to their ultrahigh dot density, excellent size uniformity, and high crystal quality. These better material properties of SML QDs promise great application potential in optoelectronic devices such as infrared photodetectors and solar cells. In this review, we present and discuss the material and device characteristics of the infrared photodetectors and solar cells with InAs QDs grown by S-K and SML growth modes.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.73.833