A Programmable Logic-in-memory (LiM) based on Magnetic Tunneling Junction (MTJ)

A programmable logic-in-memory (LiM) based on magnetic tunneling junction (MTJ) is proposed. The logic function of the LiM is programmable by storing different state, that is, parallel or anti-parallel state, on a MTJ of reference cell. The logic function is performed by comparing the resistance of...

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Published in:Journal of semiconductor technology and science 2018, 18(5), 83, pp.586-592
Main Authors: Cho, Dooho, Kim, Kyungmin, Yoo, Changsik
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전기공학
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Kim, Kyungmin
Yoo, Changsik
description A programmable logic-in-memory (LiM) based on magnetic tunneling junction (MTJ) is proposed. The logic function of the LiM is programmable by storing different state, that is, parallel or anti-parallel state, on a MTJ of reference cell. The logic function is performed by comparing the resistance of the MTJs in the cells representing the operands with that of the reference cell. A 24x8 LiM array has been simulated with a 65-nm CMOS process. When the LiM array is programmed as 8-bit full adder, the operation is completed in less than 3.6-ns and the energy consumption is 0.25-pJ/bit. KCI Citation Count: 0
doi_str_mv 10.5573/JSTS.2018.18.5.586
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title A Programmable Logic-in-memory (LiM) based on Magnetic Tunneling Junction (MTJ)
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