Electrode-Evaporation Method of III-nitride Vertical-type Single Chip LEDs

An electrode-evaporation technology on both the top and bottom sides of the bare vertical-type single chip separated from the traditional substrate by cooling, was developed for III-nitride vertical-type single chip LEDs with thick GaN epilayer. The post-process of the cooling step was followed by s...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2018, 73(9), , pp.1346-1350
Main Authors: Kim, Kyoung Hwa, Ahn, Hyung Soo, Jeon, Injun, Cho, Chae Ryong, Jeon, Hunsoo, Yang, Min, Yi, Sam Nyung, Kim, Suck-Whan
Format: Article
Language:English
Subjects:
Cooling
Diodes
Electrodes
Electron beams
Evaporation
Gallium nitrides
Mathematical and Computational Physics
Optical properties
Particle and Nuclear Physics
Physics
Physics and Astronomy
Product development
Shadow masks
Shadows
Substrates
Theoretical
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Summary:An electrode-evaporation technology on both the top and bottom sides of the bare vertical-type single chip separated from the traditional substrate by cooling, was developed for III-nitride vertical-type single chip LEDs with thick GaN epilayer. The post-process of the cooling step was followed by sorting the bare vertical-type single chip LEDs into the holes in a pocket-type shadow mask for deposition of the electrodes at the top and bottom sides of bare vertical-type single chip LEDs without the traditional substrate for electrode evaporation technology for vertical-type single chip LEDs. The variation in size of the hole between the designed shadow mask and the deposited electrodes owing to the use of the designed pocket-type shadow mask is investigated. Furthermore, the electrical and the optical properties of bare vertical-type single chip LEDs deposited with two different shapes of n -type electrodes using the pocket-type shadow mask are investigated to explore the possibility of the e-beam evaporation method.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.73.1346