Mobility Enhancement in Polycrystalline Silicon Thin Film Transistors due to the Dehydrogenation Mechanism

We investigated the mechanism of mobility enhancement after the dehydrogenation process in polycrystalline silicon (poly-Si) thin films. The dehydrogenation process was performed by using an in-situ CVD chamber in a N 2 ambient or an ex-situ furnace in air ambient. We observed that the dehydrogenate...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2018, 73(9), , pp.1329-1333
Main Authors: Lee, Seok Ryoul, Sung, Sang-Yun, Lee, Kyong Taik, Cho, Seong Gook, Lee, Ho Seong
Format: Article
Language:English
Subjects:
Dehydrogenation
Mathematical and Computational Physics
Particle and Nuclear Physics
Photovoltaic cells
Physics
Physics and Astronomy
Polycrystals
Preferred orientation
Semiconductor devices
Silicon films
Theoretical
Thin film transistors
Thin films
Valence band
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Summary:We investigated the mechanism of mobility enhancement after the dehydrogenation process in polycrystalline silicon (poly-Si) thin films. The dehydrogenation process was performed by using an in-situ CVD chamber in a N 2 ambient or an ex-situ furnace in air ambient. We observed that the dehydrogenated poly-Si in a N 2 ambient had a lower oxygen concentration than the dehydrogenated poly-Si annealed in an air ambient. The in-situ dehydrogenation increased the (111) preferred orientation of poly-Si and reduced the oxygen concentration in poly-Si thin films, leading to a reduction of the trap density near the valence band. This phenomenon gave rise to an increase of the field-effect mobility of the poly-Si thin film transistor.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.73.1329