A new DG nanoscale TFET based on MOSFETs by using source gate electrode: 2D simulation and an analytical potential model

• Published in: Journal of the Korean Physical Society 2017, 71(4), , pp.215-221
• Main Authors: Ramezani, Zeinab, Orouji, Ali A.
• Format: Article
• Language: English
• Subjects: Computer simulation; Field effect transistors; Mathematical and Computational Physics; MOSFETs; Particle and Nuclear Physics; Physics; Physics and Astronomy; Semiconductor devices; Switching; Theoretical; Two dimensional models; 물리학
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.71.215

This paper suggests and investigates a double-gate (DG) MOSFET, which emulates tunnel field effect transistors (M-TFET). We have combined this novel concept into a double-gate MOSFET, which behaves as a tunneling field effect transistor by work function engineering. In the proposed structure, in addition to the main gate, we utilize another gate over the source region with zero applied voltage and a proper work function to convert the source region from N + to P + . We check the impact obtained by varying the source gate work function and source doping on the device parameters. The simulation results of the M-TFET indicate that it is a suitable case for a switching performance. Also, we present a two-dimensional analytic potential model of the proposed structure by solving the Poisson’s equation in x and y directions and by derivatives from the potential profile; thus, the electric field is achieved. To validate our present model, we use the SILVACO ATLAS device simulator. The analytical results have been compared with it.