Self-timed Read Termination for Reduced Read Disturbance and Power Consumption in Large-scale Cross-point ReRAM Arrays

We present a self-timed read termination (STRT) to improve read disturbance and reduce power consumption in a large cross-point ReRAM array. Due to the variability of ReRAM cells, a read current is forced to flow through the filament of memory cells for a time after the read decision is made, result...

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Bibliographic Details
Published in:Journal of semiconductor technology and science 2018, 18(6), 84, pp.704-713
Main Authors: Choi, Jong-Moon, Kang, Hyun-Suk, Kwon, Kee-Won
Format: Article
Language:English
Subjects:
전기공학
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Summary:We present a self-timed read termination (STRT) to improve read disturbance and reduce power consumption in a large cross-point ReRAM array. Due to the variability of ReRAM cells, a read current is forced to flow through the filament of memory cells for a time after the read decision is made, resulting in unnecessary power consumption and read disturbance. The STRT helps decrease the total read-stress time by approximately 75 % in fully integrated 16-kb cross-point ReRAM arrays. Moreover, the power consumption is decreased by 72.8 % throughout the all LRS 1-Mb ReRAM array when measured in fabricated 16-kb cross-point ReRAM using 350-nm CMOS technology. KCI Citation Count: 0
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2018.18.6.704