Oxide Reduction Process for the Synthesis of p-Type BixSb2−xTe3 Compounds and Related Thermoelectric Transport Properties

We propose the oxide reduction process for the fabrication of p -type Bi x Sb 2− x Te 3 ( x  = 0, 0.14, 0.24, 0.32, 0.40 and 0.54) compounds. Using starting materials in oxide forms only (Bi 2 O 3 , Sb 2 O 3 , and TeO 2 ), we could fabricate the compounds with competitive ZT values through the propo...

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Bibliographic Details
Published in:Electronic materials letters 2019, 15(1), , pp.49-55
Main Authors: Lim, Young Soo, Lim, Chaeseon, Lee, Gil-Geun
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Condensed Matter Physics
Materials Science
Nanotechnology
Nanotechnology and Microengineering
Optical and Electronic Materials
Original Article - Energy and Sustainability
전자/정보통신공학
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Summary:We propose the oxide reduction process for the fabrication of p -type Bi x Sb 2− x Te 3 ( x  = 0, 0.14, 0.24, 0.32, 0.40 and 0.54) compounds. Using starting materials in oxide forms only (Bi 2 O 3 , Sb 2 O 3 , and TeO 2 ), we could fabricate the compounds with competitive ZT values through the proposed process. The highest ZT of 1.23 was achieved at 373 K in Bi 0.32 Sb 1.68 Te 3 , and the opportunity for tuning the optimum operating temperature of the compounds was also found. The effects of the Bi content on the thermoelectric transport properties were investigated in detail, and it was proven from the viewpoints of structural, electrical, and thermal properties that oxide reduction process could be a general way to fabricate Bi 2 Te 3 -based thermoelectric compounds. Graphical Abstract
ISSN:1738-8090
2093-6788
DOI:10.1007/s13391-018-0094-2