Optimizing Collector-Emitter Saturation Voltage at 3000 V Insulated Gate Bipolar Transistors Using Laser Thermal Annealing

• Published in: Transactions on electrical and electronic materials 2019, 20(1), , pp.7-11
• Main Authors: Kim, Bong-Hwan, Shin, Hoon-Kyun, Park, Jin Young, Chang, Sang-Mok
• Format: Article
• Language: English
• Subjects: Chemistry and Materials Science; Electronics and Microelectronics; Instrumentation; Materials Science; Optical and Electronic Materials; Regular Paper; 전기공학
• ISSN: 1229-7607; 2092-7592
• DOI: 10.1007/s42341-018-00087-2

In this work, two thermal annealing processes (furnace and laser annealing) are adopted to obtain  3000 V breakdown voltage in insulated gate bipolar transistors (IGBTs) for propulsion control system of electric vehicles. In furnace annealing process (450 °C for 30 min), the parameter of V ce (sat) is 5.5–6.5 V once measuring at I c  = 2.0 A with EDS(electrical die sorting) analyser. However, annealing process was performed using a laser equipment to lower the V ce (sat). After back side grinding and back side implant, the sample wafer undergoes laser annealing process. From various annealing conditions it was found that the V ce (sat) was 1.6–1.7 V when measuring at collector current (I c ) of 2.0 A after annealing at pulse with of 1100 nm, 3-overlap and 3.5 J/cm 2 . From these results, it is found that the V ce (sat) is lower as increasing laser energy density and overlapping and the well-distributed V ce (sat) values over the entire chips appear as widening the laser pulse.