Influence of Annealing Temperature and Time on the Photoluminescence and the Structure of Y2O3:Eu Thin Films

• Published in: Journal of the Korean Physical Society 2019, 74(4), , pp.379-383
• Main Authors: Jeong, Jin Yeong, Kim, Joo Han
• Format: Article
• Language: English
• Subjects: Annealing; Compressive properties; Cube texture; Mathematical and Computational Physics; Particle and Nuclear Physics; Photoluminescence; Physics; Physics and Astronomy; Radio frequency; Silicon wafers; Stress relaxation; Theoretical; Thin films; X-ray diffraction; Yttrium oxide; 물리학
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.74.379

Y 2 O 3 :Eu thin films were deposited on p -type (100)-oriented silicon wafers by using the radiofrequency (RF) magnetron sputter deposition technique and then post-annealed in an air ambient at various temperatures and holding times. X-ray diffraction data showed that the as-deposited films had a cubic Y 2 O 3 structure textured with the (222) plane. The as-deposited films were found to be under internal compressive stress, and the annealing treatment led to relaxation of the stress in the films. Photoluminescence (PL) was observed from the films annealed at temperatures ≥ 400°C, and the strongest peak occurred at 613 nm in the red range. The PL intensity increased as the annealing temperature was increased, resulting from the improved crystalline quality of the Y 2 O 3 :Eu films annealed at higher temperatures. The PL intensity reached a maximum at 1200°C and then decreased due to the formation of the Y 2 SiO 5 phase. The Y 2 O 3 :Eu films were also annealed at 1200°C for different periods of time from 1 to 10 h. The PL intensity of the 1200°C-annealed films was decreased for longer holding time resulting from the formation of the Y 2 SiO 5 phase.