Multiple surface conduction channels via topological insulator and amorphous insulator thin film multi-stacks

Multi-channel Bi2Se3 thin films were grown by combining molecular beam epitaxy and atomic layer deposition. High-resolution transmission electron microscope images showed that c-axis oriented Bi2Se3 grew on amorphous Al2O3 even after multiple stacking. While the surface morphology degraded for the u...

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Bibliographic Details
Published in:Current applied physics 2019, 19(3), , pp.219-223
Main Authors: Jerng, Sahng-Kyoon, Jeon, Jae Ho, Kim, Youngwook, Kim, Jun Sung, Chun, Seung-Hyun
Format: Article
Language:English
Subjects:
Atomic layer deposition
Bismuth selenide
Molecular beam epitaxy
Topological insulator
van der Waals epitaxy
물리학
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Summary:Multi-channel Bi2Se3 thin films were grown by combining molecular beam epitaxy and atomic layer deposition. High-resolution transmission electron microscope images showed that c-axis oriented Bi2Se3 grew on amorphous Al2O3 even after multiple stacking. While the surface morphology degraded for the upper layers, each layer was electrically similar. The electrical transport measurements showed that the weak anti-localization effect was quantitatively enhanced upon increasing the number of Bi2Se3 channels. Our results provide a promising approach to exploit diverse combinations of layered topological insulator films vertically stacked with amorphous insulator films. [Display omitted] •Topological and non-topological insulator multilayers were fabricated.•Molecular beam epitaxy and atomic layer deposition were ex-situ combined.•Surface conduction channels increased as the number of Bi2Se3 channel increased.
ISSN:1567-1739
1878-1675
DOI:10.1016/j.cap.2018.07.020