Selection Line Optimization of Nanoelectromechanical (NEM) Memory Switches for Stress Relief

Selection lines (SLs) of nanoelectro-mechanical (NEM) memory switches are optimized for stress relief by using finite-element-method (FEM) simulation. According to the simulation results, as the length of SL (LSL) decreases, pull-in voltage (VPI) increases while the maximum stress (σmax) concentrate...

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Bibliographic Details
Published in:Journal of semiconductor technology and science 2019, 19(2), 86, pp.203-207
Main Authors: Jo, Hyun Chan, Kang, Min Hee, Choi, Woo Young
Format: Article
Language:English
Subjects:
전기공학
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Summary:Selection lines (SLs) of nanoelectro-mechanical (NEM) memory switches are optimized for stress relief by using finite-element-method (FEM) simulation. According to the simulation results, as the length of SL (LSL) decreases, pull-in voltage (VPI) increases while the maximum stress (σmax) concentrated at the anchor of a movable beam decreases. Thus, it is important to determine optimal LSL to achieve better reliability while maintaining VPI. KCI Citation Count: 2
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2019.19.2.203