Correlation Between Primary Si and Silicide Refinement Induced by Ultrasonic Treatment of Multicomponent Al–Si Alloy Containing Ti, Zr, V, and P

The correlation between primary Si and silicide refinement induced by ultrasonic treatment (UST) of multicomponent Al–Si alloy containing Ti, Zr, V, and P was investigated. UST significantly refined the primary Si phase owing to cavitation-induced wetting and deagglomeration of MgAl 2 O 4 particles....

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Bibliographic Details
Published in:Metals and materials international 2019, 25(5), , pp.1235-1245
Main Authors: Jung, Jae-Gil, Cho, Young-Hee, Ahn, Tae-Young, Yoon, Jae-Hee, Lee, Sang-Hwa, Lee, Jung-Moo
Format: Article
Language:English
Subjects:
Aluminum base alloys
Cavitation
Characterization and Evaluation of Materials
Chemistry and Materials Science
Deterioration
Elongation
Engineering Thermodynamics
Heat and Mass Transfer
High temperature
Intermetallic compounds
Machines
Magnetic Materials
Magnetism
Manufacturing
Materials Science
Metallic Materials
Nucleation
Particle deagglomeration
Processes
Silicides
Silicon
Solid Mechanics
Titanium
Ultrasonic processing
Vanadium
Wetting
Zirconium
재료공학
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Summary:The correlation between primary Si and silicide refinement induced by ultrasonic treatment (UST) of multicomponent Al–Si alloy containing Ti, Zr, V, and P was investigated. UST significantly refined the primary Si phase owing to cavitation-induced wetting and deagglomeration of MgAl 2 O 4 particles. Lowering the UST finish temperature caused deterioration of the degree of primary Si refinement, instead leading to silicide refinement. Cavitation-induced silicide nucleation on wetted MgAl 2 O 4 consumed the MgAl 2 O 4 particles, particularly in the case of primary Si nucleation. Similarly, the formation of an AlP phase on the silicide phase reduced the nucleation efficiency of the AlP phase. Poisoning of the MgAl 2 O 4 and AlP phases by the silicide phase was responsible for the deterioration in primary Si refinement. Room-temperature tensile strength and high-temperature elongation were increased by UST and were dependent on the size of primary Si.
ISSN:1598-9623
2005-4149
DOI:10.1007/s12540-019-00297-0