Large-scale chemical vapor deposition growth of highly crystalline MoS2 thin films on various substrates and their optoelectronic properties

• Published in: Current applied physics 2019, 19(10), , pp.1127-1131
• Main Authors: Nguyen, Van Tu, Ha, Seongju, Yeom, Dong-Il, Ahn, Yeong Hwan, Lee, Soonil, Park, Ji-Yong
• Format: Article
• Language: English
• Subjects: CVD; FET; Monolayer; MoS2; Photoresponse; 물리학
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2019.07.007

Large-scale growth of mostly monolayer molybdenum disulfide (MoS2) on quartz, sapphire, SiO2/Si, and waveguide substrates is demonstrated by chemical vapor deposition with the same growth parameters. Centimeter-scale areas with large flakes and films of MoS2 on all the growth substrates are observed. The atomic force microscopy and Raman measurements indicate the synthesized MoS2 is monolayer with high quality and uniformity. The MoS2 field effect transistors based on the as-grown MoS2 exhibit carrier mobility of 1–2 cm2V−1s−1 and On/Off ratio of ~104 while showing large photoresponse. Our results provide a simple approach to realize MoS2 on various substrates for electronics and optoelectronics applications. •Mostly monolayer MoS2 can be grown in the same CVD setup with the same procedure on various substrates such as quartz, sapphire, SiO2/Si, and waveguide substrates.•The growth region extends almost cm-scale, which shows that scale-up production can be possible with CVD.•Devices based on as-grown MoS2 show large albeit slow photoresponse under visible light illuminations.