Growth Behavior of SiO2 Films on Polyimide Substrates after Ion-Beam Treatment

• Published in: Journal of the Korean Physical Society 2019, 75(8), , pp.591-596
• Main Authors: Han, Jin Hee, Kim, Bong Ho, Kwon, Soon Hyeong, Yoon, Young Joon
• Format: Article
• Language: English
• Subjects: Argon; Chemical bonds; Chemical properties; Contact angle; Flow velocity; Hydrophilicity; Ion beams; Mathematical and Computational Physics; Morphology; Organic chemistry; Particle and Nuclear Physics; Physics; Physics and Astronomy; Silicon dioxide; Substrates; Surface roughness; Theoretical; 물리학
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.75.591

This study investigated the effects on physical and chemical properties of a polyimide (PI) substrate of the exposure time and the flow rates of argon and oxygen for ion-beam treatment. The surface roughness, morphology, and chemical bonding states of the PI surface were analyzed, and the change in hydrophilicity of PI after ion-beam treatment was investigated. The contact angle of PI decreased after ion-beam treatment, which is considered to be due to increases the in surface roughness and the proportion of hydrophilic bonds such as C-O. Particularly, ion-beam treatment with argon and oxygen flow rates of 25 and 25 sccm, respectively, decreased the contact angle from 61.6° to 32.9° and increased the proportion of C-O bonds from 3.5% to 15.7%. Finally, the thin SiO 2 layer which was deposited on ion-beam treated PI showed a smoother and flatter morphology than that on pristine PI due to the increase in the hydrophilicity of the PI substrate.