Resistive switching characteristic of Ce0.9Y0.1O2/ TiO2 bi‑layer structure by photochemical metal‑organic deposition

Sneak current is one of the main bottlenecks for dense crossbar array resistive random access memory. This study reports highly non-linear resistive switching characteristic from Ce0.9Y0.1O2/ TiO2 bi-layer (1S/1R device) structure, fabricated by photochemical metal-organic deposition, as a solution...

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Bibliographic Details
Published in:Hanʼguk Seramik Hakhoe chi 2020, 57(1), 386, pp.73-79
Main Authors: Sung‑Eun Kim, Jin-Gyu Lee, In-Young Choi, Ha-Eun Kim, Hong-Sub Lee
Format: Article
Language:English
Subjects:
재료공학
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Summary:Sneak current is one of the main bottlenecks for dense crossbar array resistive random access memory. This study reports highly non-linear resistive switching characteristic from Ce0.9Y0.1O2/ TiO2 bi-layer (1S/1R device) structure, fabricated by photochemical metal-organic deposition, as a solution for sneak current issue. Ce0.9Y0.1O2 material, possessing oxygen vacancies, was used as a potential barrier as well as oxygen reservoir which rectified the current of low resistance state without an electrical breakdown in 1S/1R device. TiO2 was adopted for resistive switching property, and TiO2 layer having mixed phase (anatase and brookite) showed typical diode switching behavior. The photochemical reaction of photochemical metal-organic deposition process and phase formation were monitored and established using by Fourier-transform infrared spectroscopy and X-ray diffraction, respectively. The 1S/1R device showed highly non-linear resistive switching characteristic, large on/ off ratio of above three orders of magnitude with low operating current. KCI Citation Count: 0
ISSN:1229-7801
2334-0491
DOI:10.1007/s43207-019-00006-y