Rapid curing of solution-processed zinc oxide films by pulse-light annealing for thin-film transistor applications

In this study, a pulse-light annealing method is proposed for the rapid fabrication of solution-processed zinc oxide (ZnO) thinfilm transistors (TFTs). Transistors that were fabricated by the pulse-light annealing method, with the annealing being carried out at 90℃ for 15 s, exhibited a mobility of...

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Bibliographic Details
Published in:Electronic materials letters 2015, 11(1), , pp.82-87
Main Authors: Kim, Dong Wook, Park, Jaehoon, Hwang, Jaeeun, Kim, Hong Doo, Ryu, Jin Hwa, Lee, Kang Bok, Baek, Kyu Ha, Do, Lee-Mi, Choi, Jong Sun
Format: Article
Language:English
Subjects:
Annealing
Characterization and Evaluation of Materials
Chemistry and Materials Science
Condensed Matter Physics
Curing
Electrical properties
Materials Science
Nanotechnology
Nanotechnology and Microengineering
Optical and Electronic Materials
Oxides
Semiconductor devices
Semiconductors
Thin film transistors
Transistors
Zinc oxide
전자/정보통신공학
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Summary:In this study, a pulse-light annealing method is proposed for the rapid fabrication of solution-processed zinc oxide (ZnO) thinfilm transistors (TFTs). Transistors that were fabricated by the pulse-light annealing method, with the annealing being carried out at 90℃ for 15 s, exhibited a mobility of 0.05 cm 2 /Vs and an on/off current ratio of 10 6 . Such electrical properties are quite close to those of devices that are thermally annealed at 165℃ for 40 min. X-ray photoelectron spectroscopy analysis of ZnO films showed that the activation energy required to form a Zn-O bond is entirely supplied within 15 s of pulse-light exposure. We conclude that the pulse-light annealing method is viable for rapidly curing solution-processable oxide semiconductors for TFT applications.
ISSN:1738-8090
2093-6788
DOI:10.1007/s13391-014-4209-0