Gettering of Ni silicide to minimize the leakage current in metal-induced crystallized polycrystalline silicon thin-film transistors

Abstact Metal-induced lateral crystallization (MILC) technology has been regarded as the only alternative for low temperature polycrystalline silicon (poly-Si) since it became apparent that laser technology still had intrinsic problems for industrial use. The only problem with MILC poly-Si thin-film...

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Bibliographic Details
Published in:Electronic materials letters 2012, 8(2), , pp.107-110
Main Authors: Byun, Chang Woo, Son, Se Wan, Lee, Yong Woo, Kang, Hyun Mo, Park, Seol Ah, Lim, Woo Chang, Li, Tao, Joo, Seung Ki
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Condensed Matter Physics
Materials Science
Nanotechnology
Nanotechnology and Microengineering
Optical and Electronic Materials
전자/정보통신공학
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Summary:Abstact Metal-induced lateral crystallization (MILC) technology has been regarded as the only alternative for low temperature polycrystalline silicon (poly-Si) since it became apparent that laser technology still had intrinsic problems for industrial use. The only problem with MILC poly-Si thin-film transistors (TFTs) is a relatively large leakage current, which has been reported to be due to Ni silicides trapped at the grain boundaries of the poly-Si thin film on the way to lateral crystallization. In this work, the trapped Ni silicides have been removed by catalytic phase transformation. This process has ameliorated not only the problem of leakage current but it has also improved other electrical properties, such as field effect mobility and subthreshold slope by gettering of the Ni silicide.
ISSN:1738-8090
2093-6788
DOI:10.1007/s13391-012-2001-6