Fabrication and sensing properties of a micro-humidity sensor system using CMOS technology

A micro-humidity sensor system is designed and fabricated by 0.8 μm analog mixed CMOS technology. The integrated sensor system consists of an n-channel differential FET humidity sensor, a Wheatstone bridge humidity senor, and an operational amplifier block, respectively. The differential sensor empl...

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Bibliographic Details
Published in:Electronic materials letters 2010, 6(1), , pp.7-12
Main Author: Lee, Sung Pil
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Condensed Matter Physics
Materials Science
Nanotechnology
Nanotechnology and Microengineering
Optical and Electronic Materials
전자/정보통신공학
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Summary:A micro-humidity sensor system is designed and fabricated by 0.8 μm analog mixed CMOS technology. The integrated sensor system consists of an n-channel differential FET humidity sensor, a Wheatstone bridge humidity senor, and an operational amplifier block, respectively. The differential sensor employs carbon nitride films as a new sensing material and has a pair of transistors, a sensing transistor and a non-sensing transistor (reference transistor), to eliminate unexpected effects. The drain current of the FET humidity sensor increases from 0.88 mA to 0.99 mA as the relative humidity increases from 10 %RH to 70 %RH.
ISSN:1738-8090
2093-6788
DOI:10.3365/eml.2010.03.007