Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells

N-type silicon with aluminum emitters for rear junctions was studied; aluminum back surface fields were replaced with n-type silicon wafers. Aluminum rear emitters for n-type silicon solar cells were studied with various rapid thermal processing conditions. With fast ramping-up and fast cooling, an...

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Bibliographic Details
Published in:Metals and materials international 2012, 18(4), , pp.731-734
Main Authors: Park, Sungeun, Kim, Young Do, Bae, Soohyun, Kim, Seongtak, Song, Jooyong, Kim, Hyunho, Park, Hyo Min, Kim, Soomin, Tark, Sung Ju, Kim, Donghwan
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Engineering Thermodynamics
Heat and Mass Transfer
Machines
Magnetic Materials
Magnetism
Manufacturing
Materials Science
Metallic Materials
Processes
Short Communications
Solid Mechanics
재료공학
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Summary:N-type silicon with aluminum emitters for rear junctions was studied; aluminum back surface fields were replaced with n-type silicon wafers. Aluminum rear emitters for n-type silicon solar cells were studied with various rapid thermal processing conditions. With fast ramping-up and fast cooling, an aluminum rear junction was formed uniformly with low emitter recombination current. The effects of junction quality on solar cell efficiency were investigated.
ISSN:1598-9623
2005-4149
DOI:10.1007/s12540-012-4022-y