Use of novel chemical dipping method for the stability evaluation of an ultrathin TaNx barrier in Cu interconnects

When a dip test in buffered oxide etching chemicals is combined with narrow contact pattern, the test can be used as a simple barrier evaluation method, especially for predicting of IPVD (Ionized Physical Vapor Deposition) extendibility. In spite of the excellent coverage of IPVD TaN x films the str...

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Bibliographic Details
Published in:Metals and materials international 2010, 16(2), , pp.293-297
Main Author: Pyo, Sung Gyu
Format: Article
Language:English
Subjects:
Barriers
Characterization and Evaluation of Materials
Chemistry and Materials Science
CONNECTORS (ELECTRICAL)
Contact
Corners
Degradation
Devices
Dipping
ELECTRONIC PRODUCTS
Engineering Thermodynamics
ETCHING
Heat and Mass Transfer
Machines
Magnetic Materials
Magnetism
Manufacturing
Materials Science
Metallic Materials
MICA
Processes
Solid Mechanics
Ultrasonic testing
재료공학
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Description
Summary:When a dip test in buffered oxide etching chemicals is combined with narrow contact pattern, the test can be used as a simple barrier evaluation method, especially for predicting of IPVD (Ionized Physical Vapor Deposition) extendibility. In spite of the excellent coverage of IPVD TaN x films the structural defect at the corner of the pattern could be the root cause of device degradation. The use of extremely thin IPVD TaN x film of around 20 Å was limited by the contact of less than 0.2 μm and an AR (Aspect Ratio) value greater than 4:1.
ISSN:1598-9623
2005-4149
DOI:10.1007/s12540-010-0420-1